What is a wide bandgap semiconductor material?

The operating temperature of the device can be very high. For example, silicon carbide can work up to 600 degrees Celsius. If diamond is made into a semiconductor, the temperature can be even higher. The device can be used on oil drilling heads to collect relevant required information.

They also have important applications in harsh environments such as aviation and aerospace.

In radio and television stations, the only high-power transmitting tubes are still electron tubes and have not been replaced by semiconductor devices.

The life of this kind of electron tube is only two to three thousand hours, it is large and very power-consuming; if a high-power transmitter device of silicon carbide is used, the volume can be reduced at least dozens to hundreds of times, and the life will be greatly increased, so high-temperature wide-bandgap semiconductors

Materials are very important new semiconductor materials.

The problem now is that this material is very difficult to grow. Silicon on silicon, GaAs on gallium arsenide, it can grow very well.

However, most of these materials do not have bulk materials, so they have to use other materials as substrates to grow.

For example, when gallium nitride is grown on a sapphire substrate, the thermal expansion coefficients and lattice constants of sapphire and gallium nitride are very different, and the grown epitaxial layer has many defects. This is the biggest problem and difficulty.

In addition, the processing and etching of this material are also difficult.

Scientists are currently working on solving this problem.