What is a Schottky diode and what are its characteristics?

Schottky diode is named after its inventor, Dr. Schottky (Schottky), SBD is Schottky Barrier Diode Schottky Barrier Diode Structure Schematic Diagram (SchottkyBarrierDiode, abbreviated as SBD) abbreviation.SBD is not made by using the principle of P-type semiconductor contact with the N-type semiconductor to form a PN junction, but rather the principle of using the metal and the semiconductor contact to form a metal-semiconductor junction. SBD is not made by contacting a P-type semiconductor with an N-type semiconductor to form a PN junction, but by contacting a metal with a semiconductor to form a metal-semiconductor junction. Therefore, SBD is also called metal-semiconductor (contact) diode or surface barrier diode, which is a hot carrier diode.　 It is a low-power, high-current, ultra-high-speed semiconductor device introduced in recent years. Its reverse recovery time is very short (can be as small as a few nanoseconds), forward conduction voltage drop of only 0.4V or so, while the rectifier current can reach several thousand milliamps. These excellent characteristics are fast recovery diodes can not be compared. Most of the medium and low power Schottky rectifier diodes are in package form. The main features of the SBD include two aspects: 1) Since the Schottky barrier height is lower than the PN junction barrier height, its forward conduction threshold voltage and forward voltage drop are lower than that of a PN junction diode (about 0.2V lower).　(2) Since the SBD is a majority-carrier conducting device, there is no minority carrier life and reverse recovery problems. the reverse recovery time of the SBD is just the charging and discharging time of the Schottky barrier capacitance, which is completely different from the reverse recovery time of the PN junction diode. Since the reverse recovery charge of the SBD is very small, the switching speed is very fast and the switching loss is particularly small, which is especially suitable for high-frequency applications.　However, the reverse breakdown voltage is relatively low because the reverse barrier of the SBD is thin and breakdown occurs very easily on its surface. Since SBDs are more susceptible to thermal breakdown than PN junction diodes, the reverse leakage current is higher than that of PN junction diodes.