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Application and development trend of semiconductor materials
Semiconductor materials (semiconductor?material) is a class of semiconductor performance (conductivity between conductors and insulators, resistivity in the range of 1mΩ-cm ~ 1GΩ-cm), can be used to make semiconductor devices and integrated circuits of electronic materials.
A, the main types of semiconductor materials
Semiconductor materials can be divided according to the chemical composition, and then the structure and performance of the special amorphous and liquid semiconductors are classified as a separate category. According to this classification method can be divided into semiconductor materials, elemental semiconductor, inorganic compound semiconductor, organic compound semiconductor and amorphous and liquid semiconductor.
1, elemental semiconductors: in the periodic table of Ⅲ A to Ⅶ A distribution of 11 kinds of semiconducting semiconductor materials, the following table in the black box that is the 11 kinds of elemental semiconductors, which C said diamond. C, P, Se has two forms of insulators and semiconductors; B, Si, Ge, Te has a semiconducting; Sn, As, Sb has a semiconductor and metal two forms. P's melting point and boiling point is too low, Ⅰ vapor pressure is too high, easy to decompose, so they have little practical value. As, Sb, Sn's stable state is a metal, semiconductor is unstable form. B, C, Te is also due to the preparation process difficulties and performance limitations and has not yet been utilized. Therefore, these 11 elements in the semiconductor only Ge, Si, Se?3 elements have been utilized. ge, Si is still all the semiconductor materials in the two most widely used materials.
(Semiconductor materials)
2, inorganic compound semiconductors: binary system, ternary system, tetrameric system, etc.? Binary system includes: ① Ⅳ-IV: SiC and Ge-Si alloys have the structure of sphalerite. ② Ⅲ - V: by the periodic table Ⅲ elements Al, Ga, In and V elements P, As, Sb, typical representative of GaAs. they have sphalerite structure, they are second only to Ge, Si, in terms of application, there is a great deal of development prospects. ③ Ⅱ - Ⅵ group: Ⅱ group elements Zn, Cd, Hg and Ⅵ group elements S, Se, Te compounds, are some important photoelectric materials. znS, CdTe, HgTe with sphalerite structure. ZnS, CdTe, HgTe have sphalerite structure. ④ Group I-VII: Group I elements Cu, Ag, Au and ? VII elements Cl, Br, I compounds formed, of which CuBr, CuI with sphalerite structure. ⑤ Group V-VI: the compounds formed by group V elements As, Sb, Bi and group VI elements ?S, Se, Te have the forms, such as Bi2Te3, Bi2Se3, Bi2S3, As2Te3, etc. are important temperature difference electrical materials. (6) the fourth cycle of the B group and the transition group elements Cu,?Zn, Sc, Ti, V, Cr, Mn, Fe, Co, Ni's oxides, for the main thermistor materials. (7) some rare earth elements Sc, Y, Sm, Eu, Yb, Tm and Ⅴ elements N, As or Ⅵ elements S, Se, Te compounds. In addition to these binary system compounds there are solid solution semiconductors between them and the elements or between them, such as Si-AlP, Ge-GaAs, InAs-InSb, AlSb-GaSb, InAs-InP, GaAs-GaP and so on. The study of these solid solutions can play a great role in improving certain properties of a single material or opening up new applications.
(Semiconductor Materials Elemental Structure Diagram)
Semiconductor Materials
Ternary system includes: family:This is composed of a group II and a group IV atoms to replace two group III atoms in the Ⅲ-V group. For example, ZnSiP2, ZnGeP2, ZnGeAs2, CdGeAs2, CdSnSe2 and so on. Group: This is composed of a group I and a group III atom to replace two group II atoms in groups II-VI, ? CuGaSe2, AgInTe2, AgTlTe2, CuInSe2, CuAlS2 and so on. : This is composed of a Ⅰ and a Ⅴ atoms to replace the family of two Ⅲ atoms, such as Cu3AsSe4, Ag3AsTe4, Cu3SbS4, Ag3SbSe4 and so on. In addition, there is its structure is basically sphalerite tetrad system (such as Cu2FeSnS4) and more complex inorganic compounds.
3, organic compounds semiconductor: known organic semiconductors are dozens of species, familiar with naphthalene, anthracene, polyacrylonitrile, phthalocyanine and some aromatic compounds, etc., which have not yet been applied as semiconductors.
4, amorphous and liquid semiconductors: these semiconductors and crystalline semiconductors is the biggest difference is not a strictly periodic arrangement of the crystal structure.
Two, semiconductor materials, the practical use of
Preparation of different semiconductor devices on the semiconductor material has a different morphology requirements, including single crystal slices, milling, polishing chips, films, etc.. Different forms of semiconductor materials correspond to different processing techniques. Commonly used semiconductor material preparation processes are purification, single crystal preparation and thin film epitaxial growth.
Semiconductor materials, all semiconductor materials need to be purified raw materials, the purity of the requirements of the 6 "9" or more, up to 11 "9" or more. Purification methods are divided into two categories, one is not to change the chemical composition of the material to be purified, known as physical purification; the other is the elements into compounds for purification, and then the purified compounds reduced to elements, known as chemical purification. Physical purification methods are vacuum evaporation, regional refining, pulling the crystal purification, etc., the most used is the regional refining. The main methods of chemical purification are electrolysis, complexation, extraction, distillation, etc., the most used is distillation. Since each method has certain limitations, a process combining several purification methods is often used to obtain qualified materials.
(Semiconductor materials)
The vast majority of semiconductor devices are made on single-crystal wafers or epitaxial wafers with single-crystal wafers as the substrate. Bulk quantities of semiconductor single crystals are made by the melt growth method. Straight pulling method is the most widely used, 80% of the silicon single crystal, most of the germanium single crystal and indium antimonide single crystal is produced by this method, of which the largest diameter of silicon single crystal has reached 300 mm. In the melt passes into the magnetic field of the straight pulling method is called magnetically controlled crystal pulling method, with this method has produced a high uniformity of silicon single crystal. In the crucible melt surface to add liquid covering agent called liquid sealing straight pull method, with this method to pull the system of gallium arsenide, gallium phosphide, indium phosphide and other decomposition pressure larger single crystal. Suspension zone melting method of the melt is not in contact with the container, with this method of growth of high-purity silicon single crystal. Horizontal zone melting method for the production of germanium single crystal. Horizontal directional crystallization method is mainly used for the preparation of gallium arsenide single crystal, and vertical directional crystallization method for the preparation of cadmium telluride, gallium arsenide. With a variety of methods to produce the body single crystal and then after crystal orientation, roller grinding, as a reference surface, slicing, grinding, chamfering, polishing, corrosion, cleaning, testing, encapsulation and so on all or part of the process in order to provide the corresponding wafer.
The growth of a single crystal film on a single crystal substrate is called epitaxy. Epitaxial methods are gas phase, liquid phase, solid phase, molecular beam epitaxy. Industrial production use is mainly chemical vapor phase epitaxy, followed by liquid phase epitaxy. Metal-organic compounds gas-phase epitaxy and molecular beam epitaxy are used to prepare microstructures such as quantum wells and superlattices. Amorphous, microcrystalline, polycrystalline films are mostly made on glass, ceramics, metals and other substrates with different types of chemical vapor deposition, magnetron sputtering and other methods.
Three, the development of semiconductor materials
Relative to the semiconductor equipment market, semiconductor materials market has long been in a supporting position, but with the growth of chip shipments, the materials market will maintain a sustained growth, and begin to escape from the the shadow cast by the flashy equipment market. By sales revenue,
Semiconductor materials Japan maintains its position as the largest semiconductor materials market. However, Taiwan, ROW, South Korea is also beginning to rise as an important market, the rise of the materials market reflects the development of device manufacturing in these regions. Wafer fabrication materials market and packaging materials market both gained growth, future growth will moderate, but the growth momentum will remain.
(Semiconductor materials)
The U.S. Semiconductor Industry Association (SIA) predicted that the 2008 semiconductor market revenue will be close to 267 billion U.S. dollars, the fifth consecutive year of growth. Not coincidentally, the semiconductor materials market also in the same time consecutive rewrite sales revenue and shipments of records. Wafer fabrication materials and packaging materials have gained growth, the two parts of the market revenue is expected to be 26.8 billion U.S. dollars and 19.9 billion U.S. dollars this year, respectively.
Japan continues to lead the semiconductor materials market, consuming 22% of the total market. 2004 Taiwan overtook North America as the second largest semiconductor materials market. North America lags behind ROW (RestofWorld) and South Korea in fifth place.ROW includes Southeast Asian countries and regions such as Singapore, Malaysia, and Thailand. Many new fabs are investing in construction in these regions, and each region has a more solid packaging base than North America.
Chip manufacturing materials account for 60% of the semiconductor materials market, most of which comes from silicon wafers. Silicon wafers and photomasks combined accounted for 62% of the wafer fabrication materials. 2007 all wafer fabrication materials, in addition to wet chemical reagents, photomasks and sputtering targets, have received strong growth, so that the overall growth of the wafer fabrication materials market by 16%. 2008 wafer fabrication materials market growth has been relatively flat, with an increase of 7%. It is expected that in 2009 and 2010, the growth rate of 9% and 6%, respectively.
One of the most significant changes in the semiconductor materials market is the rise of the packaging materials market. in 1998, the packaging materials market accounted for 33% of the semiconductor materials market, while in 2008 the share is expected to increase to 43%. This change is due to the increasing use of milled substrates and advanced polymeric materials in ball grid arrays, chip scale packages and flip chip packages. These materials are expected to enjoy even stronger growth in the coming years as product portability and functionality place greater demands on packaging. In addition, a significant increase in the price of gold resulted in a 36% increase in the lead bonding segment in 2007.
Wafer fabrication materials similar to the semiconductor packaging materials in the next three years, the growth rate will slow down, in 2009 and 2010, an increase of 5%, respectively, to reach 20.9 billion U.S. dollars and 22 billion U.S. dollars. In addition to the gold price factor, and milling substrate is not counted in the statistics, the actual growth rate of 2% to 3%.
Four, semiconductor materials strategic position
In the mid-20th century, the invention of monocrystalline silicon and semiconductor transistors and its silicon integrated circuits developed successfully, leading to the electronics industry revolution; the early 1970s Quartz The invention of fiber-optic materials and GaAs lasers promoted the rapid development of fiber-optic communication technology and the gradual formation of high-tech industries, enabling mankind to enter the information age. The concept of superlattice and its semiconductor superlattice, the successful development of quantum well materials, completely changed the design of optoelectronic devices, so that the design and manufacture of semiconductor devices from the "impurity engineering" to the development of "energy band engineering". The development and application of nanoscience and technology will enable mankind to control, manipulate and manufacture powerful new devices and circuits from the atomic, molecular or nanoscale level, profoundly affecting the world's political and economic landscape and the form of military confrontation, and completely changing people's lifestyles
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