Classification of High Power Transistors

Power devices as a whole can be divided into uncontrollable devices, semi-controllable devices and fully controllable devices.

1, uncontrollable devices

Guide on and off can not be controlled by the control signal, completely by its current in the circuit, the voltage situation is determined, belongs to the natural conduction and natural shutdown. Including power diodes.

2, semi-controllable devices

means that the control signal can be used to control its conduction, but can not control its shutdown, and its shutdown can only be determined by its voltage and current in the main circuit, belonging to the natural shutdown. Including the thyristor (SCR) and the bidirectional thyristor (TRIAC) derived from it.

3, fully controllable devices

refers to the use of control signals to control its conduction and shutdown devices, including power transistors (GTR), power field effect tubes (power MOSFET), shutdown thyristors (GTO), insulated gate bipolar transistor (IGBT), MOS control thyristor (MCT), electrostatic inductance transistor (SIT), electrostatic inductance Thyristor (Field Controlled Thyristor, SITH) and Integrated Gate Commutator Thyristor (IGCT), among others.

Fully controllable devices can also be categorized into two main groups, current-controlled and voltage-controlled, in terms of the form of control.

Belonging to the current control type are: GTR (power transistor), SCR (controllable thyristor), TRIAC (controllable bi-directional thyristor), GTO (turn-off transistor) and so on.

Belonging to the voltage control type are: power MOSFETs, IGBTs, MCTs and SIT