Development direction of ceramic substrate

With the progress of microelectronics technology, the characteristic linewidth of micromachining technology has reached submicron level. Components above 106 ~ 109 can be integrated on a substrate, and the speed and frequency of circuit work are getting higher and higher, which puts forward higher requirements for the performance of substrate materials. As one of the key materials of hybrid integrated circuit (HIC) and multi-chip module (MCM), the substrate accounts for about 60% of its total cost. The general development direction of ceramic substrates is low dielectric constant, high thermal conductivity and low cost.

At present, the ceramic substrate materials actually produced, developed and applied include Al2O3, AlN, SiC, BeO, BN, mullite and glass-ceramics. Among them, BeO and SiC have higher thermal conductivity (&; Sup3250W/m.K), but due to the toxicity of BeO, the application range is small and the yield is low; Because of its small volume resistance (