The difference between issg and traditional oxidation

The main difference between ISSG nitriding process and traditional furnace tube oxide film nitriding process is that the position of N concentration is different. ISSG nitriding process injects plasma N+ into the interface between polysilicon gate and SiQ 2, which will not increase the interface state between SiQ 2 and Si substrate, thus significantly improving NBTI effect. However, the traditional nitridation of furnace tube oxide film is to inject N into the interface between SiQ 2 and Si substrate with NO or N2O, which will increase the interface state between SiQ 2 and Si, thus enhancing the NBTI effect. Silicon dioxide film is widely used in integrated circuits, which can be used as the gate oxide material of MOS tubes and as the insulating medium between integrated devices. ISSG(In-Situ Steam Generation) is a new low-pressure rapid thermal oxidation process (RTP). At present, ISSG is mainly used to grow ultra-thin oxide films, sacrificial oxide layers and prepare oxynitride films. The data show that ISSG process and its related nitriding process can obviously improve the NBTI effect. Due to the strong oxidation of atomic oxygen, the oxide film finally obtained by ISSG process has fewer defects, lower interfacial state density and higher quality.