What are the advantages and disadvantages of GaN amplifier and GaAs amplifier?

GaN is a wide band gap semiconductor with strong radiation resistance and higher breakdown electric field than GaAs, which is more suitable for high-power devices. However, compared with GaAs, the mobility of GaN is lower, so the high-frequency characteristics of GaN amplifier tube are not as good as GaAs, and there is a strong polarization effect in the heterojunction structure of III-N compound semiconductor. While realizing high-concentration two-dimensional electron gas, there is a lack of stable means to enhance it.