What are the characteristics of Schottky barrier diode compared with PN junction diode?

A: The basic difference between Schottky barrier diode and PN junction diode is that Schottky barrier diode is a multi-sub device and PN junction diode is a few sub devices. Therefore:

(1) Because there is no minority carrier storage, the storage time can be ignored, and Schottky barrier diodes are very suitable for high-frequency fast switching applications.

(2) Because the majority carrier current is much higher than the minority carrier current, the saturation current in the Schottky barrier is much higher than that of the PN junction diode with the same area;

(3) Because (2) for the same current, the DC voltage drop on the Schottky barrier is much lower than that on the PN junction, and the low turn-on voltage makes Schottky diodes attractive for clamping and radiation limiting applications;

(4) The fluctuation of multiplicity is small, so the noise of Schottky diode is small;

(5) Good temperature characteristics.